S8543 is a one-dimensional psd with a long, narrow active area sealed in a surface mountable chip carrier package. the active a rea of 0.7 24 mm delivers excellent position detection characteristics. hamamatsu also provides l5586 infrared led compatible with S8543. features l long, narrow active area: 0.7 24 mm l chip carrier package for surface mount (t=1.36 mm) l excellent position detection characteristic and resolution applications l position detection of optical pickup head l distance measurement l displacement measurement l position detection, etc. psd one-dimensional psd long, narrow active area and surface mountable package S8543 absolute maximum ratings (ta=25 c) parameter s y mbol value unit reverse voltage v r max.7 v operating temperature topr -10 to +75 c storage temperature tstg -20 to +80 c electrical and optical characteristics (ta=25 c) parameter s y mbol condition min. typ. max. unit spectral response range - 320 to 1100 - nm peak sensitivity wavelength p - 960 - nm photo sensitivity s = p -0.58 - a/w dark current i d v r =5 v - 1 15 na rise time tr r l =1 k ? , v r =5 v =780 nm, 10 to 90 % -2050s terminal capacitance ct v r =5 v, f=10 khz - 65 130 pf interelectrode resistance rie vb=0.1 v 100 140 180 k ? position detection error e =900 nm, v r =5 v 200 m * 1 - 50 250 m position resolution ? r io=1 a, b=1 khz * 2 -0.6 - m saturation photocurrent * 3 ist v r =5 v 200 - - a *1: within 75 % from center to end of active area *2: this is the minimum detectable light spot displacement. the detection limit is indicated by the distance on the photosensit ive surface. the numerical value of the resolution of a position sensor using a psd is proportional to both the length of the psd and the noise of the measuring system (resolution deteriorates) and inversely proportional to the photocurrent (incident energy) of the psd (resolution improves). the resolution value listed in this data sheet was calculated under the following conditions. ? frequency bandwidth: 1 khz ? photocurrent: 1 a ? equivalent input noise voltage of circuit: 1 v (1 khz) ? interelectrode resistance: typical value (refer to the specification table) *3: this is the upper limit of photocurrent linearity. the upper limit is defined as a point where the photocurrent output devi ates 10 % from the linearity. 1
one-dimensional psd S8543 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?002 hamamatsu photonics k.k. cat. no. kpsd1021e01 jan. 2002 dn 200 400 600 800 1000 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 (typ. ta=25 ?c) wavelength (nm) photo sensitivity (a/w) spectral response dark current vs. reverse voltage terminal capacitance vs. reverse voltage position detection error 0.01 0.1 1 10 100 reverse voltage (v) 1 pf 10 pf 100 pf 1 nf 10 nf terminal capacitance (typ. ta=25 ? c, f=10 khz) (typ. ta=25 ? c, =900 nm, spot light size: 200 m) -12 -2 +2 +10 +8 +6 +4 -4 -6 -8 -10 0 +12 position on psd (mm) -240 0 +240 position detection error (m) 0.01 0.1 1 10 100 reverse voltage (v) 1 pa 10 pa 100 pa 1 na 10 na dark current (typ. ta=25 ? c ) 24.0 28.5 0.3 30.5 0.3 36.7 0.35 (r0.25) 2.54 x y +0.30 1.4 -0 (0.1) (1.1) (0.1) (1.0) active area photosensitive surface ceramic index mark 0.7 0.46 1.36 0.15 2.4 0.25 4.0 0.2 anode (x1) cathode (common) anode (x2) cathode (common) details +0.3 1.4 -0 +0.2 1.0 -0 (2.0) (1.0) dimensional outline (unit: mm) kpsda0058ea kpsdb0018ea kpsdb0019ea kpsdb0020ea kpsdb0021ea 2
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